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非磁性元素Ca掺杂AlN稀磁半导体纳米棒阵列 被引量:2

Nonmagnetic Ca Doped AlN Diluted Magnetic Semiconductor Nanorod Arrays
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摘要 采用无催化剂辅助化学气相沉积法,以无水AlCl3、NH3气和无水CaCl2分别作为Al源、N源和Ca源,首次获得Ca掺杂AlN纳米棒阵列。纳米棒的长度约为几百纳米,直径为200~500nm。能谱(EDS)证明Ca掺杂的原子分数约为4.4%;光致发光光谱(PL)表明N空位引起在359nm的发光中心;在磁性能测试中观察到明晰的磁滞回线,表明样品具有室温铁磁性。 Ca doped AiN diluted magnetic semiconductor (DMS) nanorod arrays are firstly synthesized by a catalyst-free chemical vapor deposition method, using anhydrous AlCl3, NH3 and anhydrous CaCl2 as sources. The length of the nanorods is in the order of several hundreds nanometer and the diameter varies between 200nm and 500nm. EDS proves that doping concentration of Ca is about 4. 4 at%. PL spectrum shows a peak at 359nm (3.46eV), which is attributed to N vacancy. Vibration sample magnetic field meter (VSM) exhibits the samples have clear magnetic hysteresis loop (M-H). It proves that the samples are ferromagnetic at room temperature.
作者 娄阳
出处 《材料导报(纳米与新材料专辑)》 EI CAS 2012年第2期56-59,共4页
关键词 无催化剂辅助化学气相沉积法 纳米棒阵列 Ca掺杂AlN 室温铁磁性 catalyst-free chemical vapor deposition, nanorod arrays, Ca doped AlN, room temperature ferro- magnetic
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  • 1Ohno H. Making nonmagnetic semiconductors ferromagnetic [J]. Science, 1998,281 : 951.
  • 2Matsumoto Y, Murakami M, Shono T, et al. Room-tempe- rature ferromagnetism in transparent transition metal-doped titanium dioxide[J]. Science, 2001,291 : 854.
  • 3Das G P, Rao B K, Jena P. Ferromagnetism in Cr-doped GaN: A first-principles calculation[J]. Phys Rev B, 2004, 69:214422.
  • 4Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future [J]. Science, 2001,294: 1488.
  • 5Munekata H, Ohno H, Molnar S V, et al. Diluted magnetic Ⅲ-V semiconductors[J]. Phys Rev Lett, 1989,63 : 1849.
  • 6Ohno H, Shen A, Matsukura F, et al. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J]. Appl Phys Lett, 1996,69 : 363.
  • 7Reed M L, E1-Masry N A, Stadelmaier H H, et al. Room temperature ferromagnetie properties of (Ga, Mn)N[J]. Appl Phys Lett, 2001,79 : 3473.
  • 8Park C H, Zhang S B, Wei S H. Origin of p-type doping difficulty in ZnO: The impurity perspective[J]. Phys Rev B, 2002,66 : 73202.
  • 9Vurgaftman I, Meyer J R, Ram Mohan L R. Band parameters for Ⅲ-V compound semiconductors and their alloys[J]. J Appl Phys, 2001,89 :5815.
  • 10Sato K, Dederichs P H, Araki K, et al. Ab initio materials design and curie temperature of GaN-based ferromagnetic semiconductors[J]. Phys Status Solidi C, 2003,7 : 2855.

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