摘要
利用Ni/Ge/Au/Ni/Au和Pd/In两种金属结构成功地对体硅掺杂N-GaAs半导体(Nd=10^(18)cm^(-3))和离子注入N-GaAs半导体(dose=8×10^(12)cm^2,注入有源区深度(d=0.2μm)制成低阻欧姆接触。并对实验结果和接触机理进行了讨论。所得合金接触的接触电阻率分别为10^(-6)Ωcm^2(10^(18)cm^(-3)掺杂),和10^(-3)Ωcm^(-2)(8×10^(12)cm^2注入)数量级并具有长期的稳定性。接触制备方法和GaAs工艺相适。
Ni/Ge/Au/Ni/Au and Pd/In ohmic contacts on bulk-doped N-GaAs semiconductor (Nd=1018 cm-3) and Ion - implanted N-GaAs semiconductor ( dose = 8×1012cm2, implanted depth d = 0.2μm are successfully fabricated. The experimental results and the contact mechanism are discussed. The alloyed contacts display long-term stability with low contact resistivity (106cm2 for 1018cm-3 doping, 10-3OOcm2 for 8×1012cm2 implantation ). The fabrication procedure is compatible with GaAs device technology.
出处
《北京工业大学学报》
CAS
CSCD
1991年第4期26-31,共6页
Journal of Beijing University of Technology
关键词
GAAS
半导体
欧姆接触
掺杂
GaAs semiconductor, Ion - implantation, electron beam evaporation, ohmic contact
