摘要
中子辐照在半导体硅晶体中形成无序区,使其电学性能受到严重影响.本文根据无序区基本特征,系统分析中子辐照对少数载流子寿命影响的过程,给出了一个完整自洽的计算表达式;理论计算了材料掺杂浓度、无序区辐照缺陷分布态,以及载流子注入量等参量对少数载流子寿命的影响.最后,将计算结果与点缺陷模型、及实验测量数量进行比较和讨论.
Disordered regions produced by neutron irradiation are highly effective on the degrada-tion of minority carrier lifetime in semiconductors.According to the characteristics of disor-dered regions, the carrier recombination process in silicon involving the regions isanalysed.Aself-consistent computation model is presented.The calculated results of the dependences ofminority lifetime degradation on the defect distribution, doped concentration and excess car-rier density have been obtained.Finally, the results of the disordered-regions model are com-pared with that of the point defect model, and with the measurement data.
关键词
硅
少子寿命
中子辐照
无序区
Silicon
Minority carriers lifetime
Neutron irradiation
Disordered regions
