摘要
研究了氮化硅的氧化机制以及被动氧化至主动氧化的转捩温度,并结合试验结果做了分析。结果表明氮化硅在高温下极易炸裂,在被动氧化机制下生成氮气和SiO2薄膜,转捩温度和碳化硅材料基本一致。
The oxidation mechanism and transition temperature of silicon nitride were studied.The results indicate that the silicon nitride burst easily at high temperature,the silicon dioxide film and the nitrogen generate under passive oxidation mechanism.The results also indicate that silicon nitride and silicon carbide have the same transition temperature.
出处
《宇航材料工艺》
CAS
CSCD
北大核心
2010年第1期28-31,共4页
Aerospace Materials & Technology
关键词
抗氧化
氮化硅
转捩温度
Oxidation mechanism
Silicon nitride
Transition temperature
