摘要
研究了Ｃｏ２Ｏ３的含量对ＳｎＯ２·Ｃｏ２Ｏ３·Ｔａ２Ｏ３系列压敏电阻性能的影响。实验发现，在温度为１３５０℃下烧成的９９．２％ＳｎＯ２＋０．７５％Ｃｏ２Ｏ３＋０．０５％Ｔａ２Ｏ５材料具有最大的击穿电压。应用晶界缺陷模型解释了ＳｎＯ２·Ｃｏ２Ｏ３·Ｔａ２Ｏ５压敏电阻产生肖特基势垒的原因。按照这一模型，Ｃｏ在肖特基势垒的形成中起到一个关键作用。
The effect of Co2O3 concentration on the performance of the SnO2.Co2O3 .Ta2O5 varistors has been investigated. It was found that 99. 2%SnO2+0.75 %Co2O3 + 0. 05%Ta2O5 varistor has the maximum breakdown voltage in the SnO2.Co2O3.Ta2O5 varistors sintered at 1350 ℃ An atomic defect model has been used to explain the presence of the Schottky barriers at the grain boundaries. According to the model,atom Co playes the key role in the formation of the Schottky barriers present at the grain boundaries.
出处
《压电与声光》
CSCD
北大核心
2000年第1期17-18,共2页
Piezoelectrics & Acoustooptics
