摘要
使用硅溶胶、pH值调节剂、表面活性剂和氧化剂等组分配制抛光液,通过超声波发生器雾化后,在负压下导入抛光区域界面进行CMP实验,并在相同的抛光参数下,与SSP-L抛光液常规抛光进行了比较。结果表明:当磨粒质量分数为20%、pH值为11、表面活性剂和氧化剂的质量分数分别为0.5%和2%时,材料去除率MRR达到490 nm/min,表面粗糙度Ra为2.72 nm。配制的抛光液的雾化抛光效果和SSP-L抛光液常规抛光效果接近,而雾化抛光液用量接近常规抛光液的1/10。分析原因是雾化液均匀的化学组分以及在界面化学反应中的高活性、强吸附性,有利于材料去除和形成超精细的表面。
A kind of slurry which consists of silica sol, pH value regulator, surfactants and antioxidant was made. The slurry was atomized by the ultrasonic generator and imported to the polishing area to do the CMP. The polishing effects compared with the SSP-L slurry in the conventional CMP with the same polishing parameters. The results show that the MRR is 490 nm/min and the Ra of the silica wafer is 2.72 nm when the components ratio of the self-made slurry as the following ： the mass fraction of SiO2 is 20% , pH is 11, the mass fractions of surfactant and oxidant are 0.5% and 2% , respectively. The polishing effect of the self-made slurry in the atomization CMP closed to that of the SSP-L slurry in the conventional CMP, but the dosage of the atomization CMP was less than one-tenth of the conventional CMP. The reason is that the atomized liquid is helpful to remove the material and form the ultra precision surface, because of the homogeneous chemical composition, the high activity and strong adsorption on the interface of chemistry reaction.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第4期263-266,311,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(51175228)
江苏省自然科学基金资助项目(BK20080605)
关键词
化学机械抛光
精细雾化
超声波
抛光液
硅片
chemical mechanical polishing （CMP）
fine atomized
ultrasonic
slurry
silicon wafer
