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ULSI铝布线化学机械抛光研究 被引量：2

Study on Chemical Mechanical Polishing of Al Wiring in ULSI
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摘要 在分析铝的物理化学特性的基础上,对甚大规模集成电路(ULSI)铝布线化学机械抛光(CMP)机理进行研究,确定采用碱性抛光液。阐述了所选pH值调节剂的特点,探讨了其在化学机械抛光过程中的作用机理,并分析了所选表面活性剂所发挥的提高高低选择比的作用。最后,对所选pH值调节剂和表面活性剂对铝化学机械抛光的影响进行了实验研究。结果表明:pH值在11.0时,去除速率最快,约为390nm/min;表面活性剂的加入对去除速率影响不大,但可以明显改善表面状态,表面粗糙度降至nm级。 Based on analysis of physical and chemical properties of aluminum, mechanism of chemical mechanical polishing （CMP） of AI wiring in ULS1 was investigated. In the experiment, alkaline slurry was used for CMP. Characteristics of selected pH regulator were described and its mechanism in CMP process was discussed. In addition, effect of surfactant on improvement of selectivity was analyzed, and effects of chosen pH regulator and surfactant on CMP of aluminum were studied in the experiment. Results showed that the fastest removal rate （about 390 nm/min） was achieved when the pH value was 11.0, and the addition of surfactant had little effect on removal rate, but it could improve surface condition significantly. In this experiment, the surface roughness was reduced to sub nanometer.
作者 韩丽丽 刘玉岭 牛新环 王如 王辰伟
机构地区 河北工业大学微电子研究所
出处 《微电子学》 CAS CSCD 北大核心 2012年第4期576-579,583,共5页 Microelectronics
关键词 甚大规模集成电路 铝布线 化学机械抛光 抛光液 ULSI Al wiring Chemical mechanical polishing Slurry
分类号 TG146.2 [金属学及工艺—金属材料] TN305.2 [电子电信—物理电子学]
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共引文献52

同被引文献16

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微电子学
2012年 第4期

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