摘要
本文对用分层电子束蒸发法形成的TiSi_x/GaAs的肖特基接触特性进行了研究,分析了不同组分下经快速退火和常规退火后TiSi_x的电阻率,与GaAs接触界面的热稳定性,化学稳定性及所形成肖特基结的电特性.结果表明:TiSi_21/GaAs界面在975℃、12秒快速退火下表现出好的热稳定性和化学稳定性,所形成的肖特基接触具有良好的电特性,在800℃、20分钟的常规退火下,界面处有Ti的堆积和某种界面化学反应.对于快速退火工艺,TiSi_2可满足作为自对准 GaAs MESFET栅极材料所要求的界面稳定性.
Thermal stability,chemical stability and electrical characteristics of TiSi_x/GaAs contactsformed by e-gun multilayer evaporation have been investigated.It is found that after rapidthermal annealing (975℃, 12s), the TiSi_x/GaAs contact is of good thermal stability, chemicalstability and of excellent electrical properties.After conventional furnace annealing (800℃,20 min),there are some accumulation of Ti and some chemical reaction at the interface.Ifrapid thermal annealing is used,TiSi_x will be of good gate material for self-aligned GaAsMESFETs.
基金
国家自然科学基金
中科院表面物理开放实验室资助
关键词
砷化镓
GAAS
肖特基接触
退火
Gallium arsenide
Silicide
Rapid thermal annealing
