摘要
实验使用MP／MB红外测温仪对加热台及叠层芯片的结构表面进行测试，对所获得的温度数据用Matlab软件进行处理分析。红外测温仪最小测量目标为Ф0．6mm，单层芯片尺寸为4mmx2mm×0．24mm（长×宽×高）。实验得到键合温度为200℃时加热台不同位置的温度上升变化曲线以及叠层芯片结构表面悬臂区域和非悬臂区域的温度上升变化曲线。通过不同区域温度变化曲线的函数拟合，发现指数函数可以很好地描述叠层芯片上层表面温度的变化。这些实验结果对深入研究键合机理有参考意义。
Use MP/MB infrared radiation thermometer to get the temperature data of the heat stage and the structural surface of the stacked die chip. The results was processed by Matlab software and then analyzed. The minimum measuring size of the infrared radiation thermometer was Ф0.6mm, the single chip size was 4mm×2mm×0.24mm （lengthxwidthxheight） . At a bonding temperature of 200℃, experimental results include temperature rise curves of the different areas of the heat stage; temperature rise curves of the cantilever and non-cantilever area of the stacked die chip. Through the curve fitting of the temperature rise curves of the different areas, we found exponential functional can be used to describe the temperature change trend of the chip properly. The results could be helpful to further studies of wire bonding mechanism.
出处
《电子与封装》
2012年第3期10-14,共5页
Electronics & Packaging
基金
国家自然科学基金（50975028）,高等学校学科创新引智计划项目资助（B08043）
关键词
叠层芯片
温度测量
悬臂与非悬臂区域
红外测温仪
stacked die chip
temperature measurement
cantilever and non-cantilever area
infrared radiation thermometer
