摘要
根据线切割机的工作原理,综合考虑了砂浆中磨料在磨削过程中的变化以及单晶直径的变化,确定了变速切割的工艺方法,同时考虑到125 mm单晶直径大、SIC磨削路线长、磨削发热量大,制定了包括线速度、耗线量、砂浆温度、砂浆流量以及各部分温度的工艺参数。通过该工艺参数进行了切割实验,验证了该工艺参数下切割的晶片可以满足要求。
As the theory of the multi-wire slicing process, the silicon ingot would move down while the wire kept the same horizontal position during the slicing process, so the slicing speed would be changed with the relation between the wire and the ingot. With the diameter of the silicon ingot increased, the quantity of heat would be remarkably increased, so the slicing process would be determined including the wire speed, the abrasive temperature, the abrasive flow and the unit temperature. The article was addressed on the effect of the slicing speed graphs on warp of the silicon sliced wafers in the multi-wire slicing.
出处
《电子工业专用设备》
2012年第3期41-44,共4页
Equipment for Electronic Products Manufacturing
关键词
线切割
翘曲度
切割速度
Multi-wire slicing
Warp
Slicing speed
