摘要
我们在玻璃衬底上用磁控溅射的方法以不同的溅射时间(15、20、25、30 min)沉积了氧化钒薄膜,我们发现随着溅射时间的增加,氧化钒薄膜的红外透过率的改变量可高达58%,氧化钒薄膜的相变温度从66℃减下到50℃,从薄膜的X射线衍射图中,我们可以看出,随着溅射时间的延长,VO2(100)峰出现。
Vanadium oxide（ VOx） thin films have been deposited on glass substrates with different sputtering times （ 15,20,25, and 30 min） by means of magnetron sputtering process. It was found that with the increase of the sputtering time, the change of the infrared transmittance can be reached as high as 58%, and the transition temperature is decreased from 66 ℃to 50℃, it is an ideal material for application in energy-efficient windows. According to the X-ray diffraction results of the thin films, it was observed that with the increase of sputtering time, VO2（100） diffraction peak appears.
出处
《电子器件》
CAS
2011年第6期629-632,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金项目(60736005)
关键词
氧化钒
溅射时间
红外透过率
相变温度
vanadium oxide
sputtering time
infrared transmittance
phase transition temperature
