摘要
实验研究了不同晶化率的微晶硅(μc-Si)薄膜的光衰退现象,提出了制备高稳定性硅薄膜太阳电池材料选取方案。研究结果表明,μc-Si中的非晶硅(a-Si)组分是导致光衰退的主要原因,晶化率越高,材料越稳定;过渡区靠近μc-Si材料区域的μc-Si材料,由于具有更好的稳定性和光敏特性,适于制备μc-Si太阳能电池;过渡区附近靠近a-Si材料区域的μc-Si材料,由于具有更高的稳定性,适于制备a-Si太阳能电池。
The stability of μc-Si：H materials for solar cells is well researched.The dependence of light-sensitivity as well as the sub gap absorption on light soaking time is monitored.The results clearly show that the magnitude of relative light induced degradation is closely related to the material structure.Amorphous fraction is the key factor to light induced degradation.The magnitude of relative efficiency degradation increases with the amorphous fraction.The more the amorphous fraction in material,the more degradation can be found.With better structure and optical properties,microcrystalline silicon with transition region is more suitable for the manufacturing of stable solar cells.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第9期1364-1366,共3页
Journal of Optoelectronics·Laser
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
高等学校博士学科点专项科研基金资助项目(20050080007)
