摘要
采用快速热退火(RTA)对热丝化学气相沉积HWCVD制备的非晶氢-硅(a-Si:H)薄膜进行晶化处理,并在此基础上制备了纳米晶氢-硅(nc-Si:H)薄膜p-n结。利用拉曼(Raman)光谱、X射线衍射(XRD)、扫描电子显微镜(SEM)和分光光度计研究了所制备(nc-Si:H)薄膜的结构、光学性能与退火温度的关系;同时,研究了不同RTA条件下制备p-n结的整流特性随温度变化的规律。研究发现,随RTA温度由700℃升高至1 100℃,薄膜的晶化率由46.3%提高到96%,拉曼峰半高宽(FWHM)由19.7cm-1降低至7.1cm-1。当退火温度为700℃时,薄膜的XRD谱中只有一个较弱的Si(111)峰;当退火温度高于900℃时,薄膜的XRD谱中除Si(111)峰外,还出现了Si(220)、Si(311)峰。同时,随退火温度的升高,薄膜的禁带宽度由1.68eV升高至2.05eV。由于禁带宽度的增加,相应的p-n结最高工作温度也由180℃升高至300℃。
Nanocrystalline Si：H films and nanocrystalline Si：H film based p-n junctions were abricated by rapid thermal annealing （RTA） of amorphous silicon films deposited by hot-wire chemical vapor dep- osition. Dependence of the structural and optical properties of the nanocrystalline Si： H films on the an- nealing temperature is studied by Raman spectroscopy, X-ray diffraction, scanning electron microscopy and spectrophotometer. The temperature dependent V characterization of the junctions is also studie＆ The Raman results show that the crystalline fraction of the films is gradually increased from 46.3 % to 96%,and the full width at half maximum （FWHM） is gradually decreased from 19.7 cm-1 to 7. 1 cm 1 as the RTA temperature is increased from 700℃ to 1 100 ℃. The X-ray diffraction results show that at the annealing temperature of 700 ℃ ,only a small peak corresponding to the Si（lll） plane is ob- served in the spectrum. In contrast,as the annealing temperature increasing above 900 ℃ ,the spectra of the nanocrystalline silicon films show Si（111）,Si（220） and Si（311） orientations. At the same time,the band gap of the deposited nanocrystalline silicon films is increased from 1.68 eV to 2.05 eV as the RTA temperature increasing from 700 ℃ to 1100℃. On the other hand,with the increasing of the band gap, the highest working temperature of the corresponding p-n junctions is gradually increased from 180 ℃ to 300 ℃.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2013年第10期1930-1935,共6页
Journal of Optoelectronics·Laser
基金
国家高技术研究发展计划(863)计划(2006AA03Z219)
中央高校基本科研业务费专项资金
江苏高校优势学科建设工程
江苏省普通高校研究生科研创新计划(CXZZ11_0206)资助项目
关键词
快速热退火(RTA)
纳米晶氢-硅(nc—Si
H)薄膜
结晶性
耐高温p-n结
Chemical vapor deposition
Energy gap
Nanocrystalline silicon
Rapid thermal annealing
Scanning electron microscopy
Semiconductor junctions
Temperature
X ray diffraction
