摘要
在化学机械抛光(CMP)过程中,温度是影响晶片最终抛光效果的主要因素之一,采用合理的温度控制方法,把温度控制在一定的范围内才能满足化学机械抛光的工艺要求。通过化学机械抛光机理分析阐述了抛光过程中热量产生的根源,介绍了一种温度控制系统的设计原理,并通过抛光实验验证并说明了温度控制的必要性。
The temperature is one of the main factors which have an effect on the sapphire polishing in the CMP process.In order to meet the requirements of CMP,we need to use a reasonable method for temperature control and control the temperature within a certain range.This paper expounds the reason of the heat during the CMP process,and presents a temperature control system,moreover,through the polishing experiments show the need for temperature control.
出处
《电子工业专用设备》
2011年第8期5-8,共4页
Equipment for Electronic Products Manufacturing
关键词
抛光盘
温度控制
抛光实验
Polishing machine＇table
Temperature control
Polishing experiment
