摘要
研究了三种不同稀释倍数的弱碱性铜粗抛液,原液采用商用FA/O型铜抛光液,稀释倍数分别为1倍、3倍和5倍。基于化学机械抛光(CMP)作用机理,在相同工艺条件下分析了三种粗抛液对铜膜的平均去除速率、片内非均匀性(WIWNU)和平坦化性能等指标的影响。铜膜的抛光实验结果表明:稀释3倍的弱碱性铜粗抛液对铜膜平均去除速率高达869.76 nm/min,片内非均匀性仅为2.32%。四层图形片的平坦化测试结果显示,图形片初始高低差为312.5 nm,采用稀释3倍的粗抛液抛光20 s后,有效消除高低差261.5 nm,基本实现了全局平坦化,满足45 nm技术节点的要求。
The weakly alkaline copper bulk slurry with the commercial FA/O type copper slurry as the original liquid was studied by diluting 1 time, 3 times and 5 times, respectively. Based on the mechanism of the chemical mechanical polishing （CMP） process, the influences of the dilution ratios of the three copper bulk slurries on the average removal rate of the copper film, within wa- fer non-uniformity （WlWNU） and planarization performance were analyzed under the same process conditions. The polishing results of the copper blanket wafer show that the average re- moval rate of 3 times diluted slurry can reach 869.76 nm/min, and the within wafer non-unifor mity is only 2.32%. Meanwhile, the planarization test results of the 4-layer copper pattern wa- fers with the initial step height of 312.5 nm show that the step height difference is eliminated 261.5 nm by using 3 times diluted slurry polishing for 20 s. The polishing results indicate that the 3 times diluted slurry can achieve the global planarization, satisfying the demand of 45 nm technology node.
出处
《微纳电子技术》
CAS
北大核心
2014年第4期262-266,共5页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308)
