摘要
在镜面抛光硅衬底上加负偏压，利用微波等离子体化学气相沉积方法生长金刚石薄膜．通过改变偏压成核阶段的不同条件制备出一系列样品，与直接在镜面抛光硅衬底上不加偏压直接生长的金刚石膜相比，成核密度明显提高，可达4×109cm－2。
Diamond films were deposited on mirror-polished slllcon substrate by means of bias enhanced nucleation (BEN) microwave plasma chemical vapor deposition (CVD) technique. The nucleation density and the gra1n slzes were analyzed by means of SEM, They had higher nucleation density than the films deposited on mirror-polished silicon substrate when bias was not applied.
出处
《吉林大学自然科学学报》
CAS
CSCD
1999年第4期47-49,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
化学气相沉积
金刚石薄膜
镜面抛光硅片
生长
bias enhanced nucleation, chemical vapor deposition, diamond film, mirror polished silicon
