摘要
研究了纳米掩膜在材料外延生长及器件制备中的应用。通过电化学腐蚀和电子束蒸发方法在GaN表面生成Ni和SiO2纳米点阵列,经过等离子体刻蚀在Ni/GaN模板上形成GaN纳米锥形结构;利用氢化物气相外延(HVPE)方法,在SiO2/GaN模板上制备厚膜GaN材料。X射线衍射(XRD)和光致发光(PL)谱测试表明,SiO2纳米点阵能有效阻挡衬底中位错往上延伸,大大降低外延层中位错密度,并有利于厚膜GaN中应力释放。
This paper investigates nanomask application in gallium nitride epitaxy and device fabrication.The nanodots Ni and SiO2 were obtained by electro-chemical erode and e-beam evaporation.Nanocones were formed on Ni/GaN template using inductively coupled plasma system and the GaN crystal was overgrown on SiO2/GaN template by hydride vapor phase epitaxy（HVPE）.It is indicated that SiO2 nanodots can obstruct from dislocations,which will obviously decrease the density of dislocation,and is propitious to the release of stress.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第4期487-490,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60876011)
广东省自然科学基金(10451802904006046)
广东省科技计划资助项目(2010B010800013)
