摘要
使用近紫外半导体芯片激发红绿蓝三基色荧光粉,制作了白光发光二极管(LED),并研究了其光电特性。结果表明,采用发射峰值波长分别在613、495和451nm的红绿蓝荧光粉,在波长400nm左右半导体芯片激发下的白光LED,其显色指数Ra最大为82;使用YAG荧光粉代替绿色荧光粉后,Ra提高到93。测试结果还表明,当工作电流从5mA增加到60mA时,制备的白光LED的相关色温(Tc)Ra的变化率分别为+9.7%和-1.0%。
The white LEDs were fabricated based on RGB (red/green/blue) phosphors excited by near ultraviolet (n-UV) LED chips. The emission peaks of RGB phosphors are 613 nm,495 nm and 451 nm, respectively. The maximum color-rendering index (Ra) of the white-light LED is 82. It is also found that if the green phosphor is replaced by YAG phosphor,the white LEDs~ maximum Ra notably increases to 93. With the driving current changing from 5 mA to 60 mA,the change rates of correlated color temper- ature and color-rendering index are +9.7% and -- 1.0 %, respectively.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2011年第12期1779-1783,共5页
Journal of Optoelectronics·Laser
基金
江苏省自然科学基金资助项目(BK2008183)
南通市应用研究资助项目(K2010058)
南通市公共技术服务平台资助项目(DE2010005)
南通大学自然科学研究资助项目(10Z002)