摘要
基于光学传输理论矩阵,设计制作SiO2和Ti3O5交替生长的分布式布拉格反射(DBR)结构作为LED芯片的电流阻挡层,并采用电感耦合等离子体(ICP)刻蚀技术在电流阻挡层处形成沟槽结构,以解决困扰LED器件效率提高的电流扩散及金属电极降低出光效率的问题。实验结果表明,采用这种结构的LED芯片能将亮度提高5%以上,而LED芯片的正向电压基本维持不变。这种反射型电流阻挡层结构能够很好地改善大尺寸LED芯片的电流扩散,有效地提高LED芯片的出光效率。
Based on optical transfer matrix theory,a distributed Bragg reflector（DBR） consisting of SiO2 and Ti3O5 is designed as the current barrier layer for high-brightness LED chips,and a trench structure is etched by inductively coupled plasma（ICP） technique at the current barrier.The problems that the current spreading restricts the improvement of the LED efficiency and the metal electrodes reduce light-extraction efficiency are solved by this way.The experiment results indicate that the brightness of the LED chip with this structure can be increased by 5%,while the chip voltage is essentially unchanged,which shows that the new structure can greatly ameliorate the current spreading and increase the extraction efficiency of LED chip.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2012年第6期1077-1081,共5页
Journal of Optoelectronics·Laser
基金
广东省重大科技专项计划(2009A080301013
2010A080402009)
广东省战略性新兴产业发展LED专项资金(2010A081002009
2011A081301004)
中央高校基本科研业务费专项基金(2011ZZ0017)
广州市重大科技专项(2010U1-D00221
2011Y5-00006)资助项目
