摘要
用扫描电子显微镜（ Ｓ Ｅ Ｍ ）和扫描隧道显微镜（ Ｓ Ｔ Ｍ ）对遭受斜入射 Ｏ＋２ 离子束轰击的 Ｉｎ Ｐ表面形貌变化进行了研究。结果表明：波纹状的表面形貌从０４μｍ 的溅射深度开始形成。在溅射深度为０４μｍ ～２０μｍ 范围，波纹状表面形貌的波长以及无序性均随溅射深度的增加而增加．波长与溅射深度有关而与溅射速率无关。研究结果证实由 Ｏ＋２ 离子束轰击导致的 Ｉｎ Ｐ表面波纹形貌能够通过在轰击期间旋转样品得到有效抑制。
By using scanning electron microscope (SEM0 and scanning tunnelling microscope (STM),and effort was made to investigate the topography formation and development of Inp surface bombarded by O\++\-2 ion beam.Ripppled topographies were observed for bombarded samples. Results show that the ripple formation starts from a sputtering depth of about 0.4μm.Within sputtering depth range 0.4μm～20μm,the wavelength and the disorder of the ripples increase as the sputtering depth increases. The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent. It is confirmed that the ion\|beam\|induced surface rippling can be effectively suppressed by sample rotation during bombardment.
出处
《电子显微学报》
CAS
CSCD
1999年第4期434-437,共4页
Journal of Chinese Electron Microscopy Society
基金
英国文化委员会合作基金
