摘要
对不同剂量离子束轰击的ZrO_2—8wt%Y_2O_3薄膜进行了XPS全扫描和窄扫描能谱的测量。结果表明,薄膜表面的碳沾污浓度与轰击离子的剂量有关;薄膜的体内部份是由标准化学配比的ZrO_2及Y_2O_3组成,Zr、Y氧化态不随轰击剂量大小而变,但Y_3d,O_(15)化学位移既不同于体材料情形,还与氩离子轰击剂量有关,对此结果进行了讨论。
Wide XPS scan curves and Zr3d, Y3d and 01s measurements have been made on the ZrO_2-8wt% Y_2O_3 film prepared by ion beam bombarding at room temperature with different dose of Ar^+ bombardment at 170 keV. The results show that the content of carbon contamination on the surface of the deposited films is related to Ar^+ bombardment dose, and the bulk of the films condists of ZrO_2 and Y_2O_3 independent on the Ar^+ dose. The Y3d and Ols peaks show that the clear shifts are compared with the standard peak positions of ordinary Y_2O_3, ZrO_2 and slight are compared with different dose of Ar^+ bombardment.
出处
《功能材料》
EI
CAS
CSCD
1992年第2期121-124,共4页
Journal of Functional Materials
关键词
离子束轰击
薄膜
XPS
分析
氧化锆
ion beam bombardment
ZtO_2-8wt%Y_2O_3 film
XPS analysis
