摘要
本文描述了用一种新的离子集团束技术在较低的温度下在Ｓｉ衬底上外延生长ＧａＡｓ的初步实验结果．实验表明：Ａｓ＋离子束轰击对于去除Ｓｉ上自然氧化层是有效的，在衬底温度为５５０℃得到ＧａＡｓ单晶．
Abstract Preliminary experimental results of epitaxial growth of GaAs on Si at a lower temperature by ionized cluster beam technique are presented. The experimental results show that the bombardment of As+ ion to remove the oxide layer on Si surface is efficient, and single crystal of GaAs on St at the temperature of 550℃ has been obtained.
关键词
硅衬底
外延生长
砷化镓
Crystals
Epitaxial growth
Ionization
Oxidation
Silicon
Substrates
