摘要
邻近效应是限制光刻系统分辨力的一个重要因素，它也限制了激光直写在亚微米和亚半微米光刻中的应用。分析了激光直写邻近效应产生的原因，指出它和电子束直写及投影光刻的区别，提出了一种简便有效的邻近校正方法。实验表明，通过光学邻近校正（ＯＰＣ），利用微米级激光直写系统，制作出了０．
Proximity effect is an important factor which limits optical lithography resolution, and
it also limits the applications of laser direct writing system in submicron and half submicron
optical lithography. The production mechanism of proximity effect in laser direct writing is
analyzed, its differences with projection optical lithography and electron beam lithography
pointed out, and a convenient and effective optical proximity correction (OPC) method
presented. The experimental results show that the feature size of 0.6 micron can be got by
using OPC method in ISI 2802 laser direct write system.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1999年第7期953-957,共5页
Acta Optica Sinica
基金
国家自然科学基金
教育部博士点基金
中国科学院微细加工光学技术国家重点实验室资助项目
关键词
激光直写
亚微米
邻近效应
光学邻近校正
光刻
laser direct writing,
submicron, proximity effect, optical proximity correction.
