摘要
通过MPCVD法在高掺杂硅衬底上生长掺硼金刚石膜（BDD）,并用四探针,扫描电镜,激光拉曼,电化学工作站对其进行了检测,发现所制备的掺硼金刚石膜电导率达10-2Ω.cm,同时发现金刚石膜质量因硼原子的掺入而有所下降,采用循环伏安法研究其电化学性质,结果表明,与Pt电极相比（1.8V和-1×10-3~3×10-4A）,BDD具有很宽的电化学窗口（~3.2 V）,较低的背景电流（-3×10-6~2×10-6A）,在铁氰化钾电解液中,表面所进行的电化学反应具有较好的准可逆性,在对有机物苯酚的催化氧化检测中发现：与Pt电极相比,BDD电极氧化能力强,且氧化产物简单、彻底,因此可以作为一种理想的电极材料.
Boron-doped diamond（BDD）film on the heavily doped silicon substrate was prepared by the microwave plasma chemical vapor deposition.The electrochemical properties of BDD were characterized by resistivity measurement by 4-point probe method,SEM,Raman spectroscopy and electrochemistry working station.The resistivity of diamond films is 10-2 Ω·cm,Meanwhile,the quality of the diamond films was deteriorated with the increasing of boron doped.The electrochemical properties of the electrode were investigated using cyclic voltammetry.The results showed that BDD electrode had a very wide potential window（~3.2 V）and very low background current（-3×10-6~2×10-6 A）,comparing with Pt electrode（1.8 V and-1×10-3~3×10-4 A）.In electrolyte including Ferri/Ferrocyanide,the electrochemical reaction was carried out on the surface with good quasi-reversibility.Studies of the oxidation of organic compounds showed that,compared with Pt electrode,the diamond electrode could oxidate phenol,and the process of oxidation was very simple and complete.
出处
《武汉工程大学学报》
CAS
2010年第12期69-72,共4页
Journal of Wuhan Institute of Technology
基金
湖北省自然科学基金(2008CDB255)
湖北省教育厅Q20081505项目的支持
