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硼掺杂多晶金刚石薄膜电极的电化学特性 被引量:2

Electrochemical Characteristic of Boron-doped Polycrystalline Diamond Thin Film Electrodes
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摘要 用循环伏安法和恒电位法研究了硼掺杂多晶金刚石薄膜电极(DFE)的若干电化学特性.电极面积4×4mm^2.在0.1mol/L KCI,NaNO_3,NaOH和KH_2PO_4+Na_2HPO_4(pH=6.86)电解质溶液中电势窗口均为-500^+800mV,而在0.lmol/L HCI和H_2SO_4溶液中电势窗口为-200^+1100mV.K_3Fe(CN)_6的氧化峰电位为+500mV,与Pt电极测量相同;校正曲线线性范围为25~400μmol/L;灵敏度为0.63μA/mm^2·mmol/L,高于铂薄膜电极的0.18μA/mm^2·mmol/L;响应时间为4s,相对标准偏差为2.3%(n=10).响应电流与扫描速率平方根成正比.连续使用二个月未发现其电化学性质有明显变化. The electrochemical characteristic of boron-doped polycrystalline diamond thin film electrodes with 4 mm×4 mm in size was studied using cyclic voltammetry and potentio-static method. The potential windows all are - 500- + 800 mV in the electrolyte solution of 0. 1 mol/L KC1, NaNO3, NaOH and KH2PO4+Na2HPO4(pH = 6. 86), but -200- + 1100 mV in 0.1 mol/L H2SO4 and HC1. The oxide peak potential of K[Fe(CN)6] is +500 mV, and similar to that of Pt electrode. The response current is proportional to the square root of scan rate. The linear range of calculation curve, response time and relative standard deviation are 25-400 μmol/L, 3 s and 2. 3% (n=10), respectively. The sensitivity is 0. 63 μA/ (mmol/L) · (mm2) and higher than 0. 18 μA/(mmol/L) · (mm2) of planar Pt thin film electrode with 4 mm × 4 mm in size under the same experimental condition. It is observed that the electrochemical characteristics of the electrode do not change during two months of the operating period.
出处 《分析化学》 SCIE EI CAS CSCD 北大核心 1995年第7期824-827,共4页 Chinese Journal of Analytical Chemistry
基金 国家自然科学基金资助项目(NO.29445008)
关键词 电化学特性 循环伏安法 DFE 金刚石薄膜电极 Diamond thin film, electrochemical characteristic, cyclic voltammetry, potassium ferricyanide
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参考文献2

  • 1章熙康,Materials Lett,1994年,18卷,318页
  • 2高小霞,电分析化学导论.分析化学丛书.5.1,1986年

同被引文献5

  • 1只金芳,田如海.金刚石薄膜电化学[J].化学进展,2005,17(1):55-63. 被引量:27
  • 2张仿清,张文军,胡博,谢二庆,陈光华.硼掺杂及未掺杂金刚石薄膜的电学和光电导特性[J].Journal of Semiconductors,1995,16(10):783-788. 被引量:3
  • 3藤岛昭 相泽益男 等.电化学测定方法[M].北京:北京大学出版社,1995.325.
  • 4[2]LIU Zhao Yue,PAN Kai,YANG Min.photoelectrochemical Studies on the Mercurochrome-sensitized Tio2 Nanoperous Electrode[J].Chem J Chinese Universities,2003,24 (5):889-891.
  • 5[6]Gurbuz Y,Kang W P,Davodson J L.High temperature tolerant diamand based microelectronic oxygen gas sensor[J].Sensors and Actuators,1998,13:115-120.

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