摘要
利用单源真空蒸发方法制备InSb薄膜。研究了基片温度控制和膜层厚度对薄膜电子迁移率的影响。室温下测得InSb薄膜的电子迁移率为4×104cm2／V.s，晶粒尺寸达微米数量级。制作的磁敏霍尔元件输入与输出电阻范围为200～500Ω，乘积灵敏度达90～150V／A·T。
InSb thin films are prepared by the vacuum evaporation method which has an evaporation source. The dependence of the election mobility on substrate ternperature and thickness of the thin films are investigated. The electron mobility of 4 ×104 cm2/V·s at room temperature for InSb thin film is obtained.The input and output resistance for the InSb thin film Hall element fabricated are 200～500 Ω, and sensitivity is in the range of 90～150 V/A·T.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1999年第5期498-501,共4页
Journal of University of Electronic Science and Technology of China
基金
天津市科学基金
关键词
INSB薄膜
真空蒸发
霍尔元件
电子迁移率
InSb thin films
vacuum evaporation
Hall element electron mobility
sensitivity
