摘要
利用真空蒸发镀膜技术研制出高灵敏度薄膜型ＩｎＳｂ霍尔器件．研究了影响ＩｎＳｂ薄膜电子迁移年的因素．俄歇电子能谱分析和扫描电镜形貌像表明，制各的ＩｎＳｂ薄膜化学元素配比与所用蒸发源材料相同，表面光滑，晶粒尺寸μｍ级。室温下测得ＩｎＳｂ薄膜的电子迁移率为４００００ｃｍ２／Ｖ·ｓ．ＩｎＳｂ薄膜霍尔器件输入输出电阻范围为２００～５００Ω，乘积灵敏度达到５０～１５０Ｖ／Ａ·Ｔ．
Abstract InSb thin film Hall elements with a high sensitivity are developed successfully by the vacuum evaporation method.The effects of factors on electron mobility of InSb thin films are investigated.The results of AES analysis indicate that the films maintain a stoichiometry of deposited compounds. The photomicrographs show that the films have large crystal grains (μm) and smooth surfaces. The electron mobility obtained at room temperature is 40 000cm2/V·s.The sensitivitys of InSb thin film Hall elements is in the range of 50-150V/A·T,with the range of input and output resistance being 200-500Ω.
出处
《天津大学学报》
EI
CAS
CSCD
1995年第2期277-281,共5页
Journal of Tianjin University(Science and Technology)
基金
天津市自然科学基金
