摘要
叙述了采用国产 MBE 装置,在 GaAs 或 InSb 衬底上生长 InSb,InAsSb薄膜材料一些基础研究工作。采用二步生长法在 GaAs 衬底上生长优质 InSb 薄膜,厚度4.8μm,其室温迁移率达到4.3×10~4cm^2V·s,载流子浓度为2.4×10^(18)cm^(-3),77K 时载流子浓度为7.49×10^(15)cm^(-3);并在生长各种类型 InAsSb 超晶格材料的基础上,首次生长了 InAs_(0·05)Sb_(0·95)/InSb 应变层超晶格结构材料,其周期厚度为21nm,InSb 应变层与 InSb 层之间的共格度为0.65,本文还将叙述制作 InAsSb 长波红外探测器的具体工艺及其一些想法。
Basic research is described on the growth of InSb and lnAsSb thin films on GaAs or InSb substracts by MBE system made in china.High quality InSb tnin films on GaAs have been grown by using two-step method,with thick- ness of 4.8μm,mobility of up to 4.3×10~4cm^2/V.s and carrier concentration of 2.4×10^(16)cm^(-3) at room temperature,and 7.49×10^(15)cm^(-3) at 77K.InAs_(0.05)Sb_(0.95)/InSb strained superlattice with periodic thickness of 21nm is grown for the first time on the basis of the growth of various InAsSb superlattices.Finally,fabrication technology for InAsSb long wavelength IR detectors will also be presented in this paper.
出处
《半导体光电》
CAS
CSCD
北大核心
1992年第4期363-366,共4页
Semiconductor Optoelectronics
关键词
超晶格
INSB薄膜
红外探测器
Strained Layer Superlattice
InSb Thin Film
IR Detector
