摘要
采用高温固相法合成了Si4+掺杂的BaZr(BO3)2:Eu红色发光荧光粉。激发光谱表明,不同Si4+掺杂浓度明显使电荷迁移态(CTS)向高能量的位置移动,且改善了样品的发光强度。分析认为,这是由于Si4+的电负性大于所取代的Zr4+,且Si4+的进入影响了Eu3+的配位数,提高了CTS向发光中心的能量传递几率。依据Judd-Ofelt理论计算的强度参数表明,随着Si4+掺杂浓度的增加,Eu3+所处格位的对称性明显降低,增大了Eu3+的跃迁几率,从而改善了发光强度。计算Eu3+间的能量传递几率发现,在掺杂浓度为5%时,Eu3+间的能量传递几率很小,其对荧光粉的发光影响不大。
Si4＋-doped BaZr（BO3）2：Eu3＋ phosphors are prepared by a conventional solid-state reaction method.Because of the stronger electronegativity of Si4＋ than Zr4＋,the charge transfer state（CTS） of Eu3＋-O2-shifts to higher energy location when Zr4＋ is substituted by Si4＋.The doping of Si4＋ ion decreases the coordination number of Eu3＋,which improves the energy transfer rates between Eu3＋ and O2-.The intensity parameters calculated according to Judd-Ofelt theory show that the Eu3＋ ion is located in a more asymmetric environment in the Si4＋-doped samples than that in undoped ones.The energy-transfer rate between Eu3＋ ions is also calculated.It has weak effect on luminescent properties of BaZr（BO3）2：Eu3＋ phosphors with 5 mol% of Eu3＋.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第12期1809-1812,共4页
Journal of Optoelectronics·Laser
基金
天津市自然科学基金资助项目(07JCYBJC06400,09JCYBJC01400)
天津市高等学校科技发展基金计划资助项目(20071207)
