期刊文献+

低色温高显色性大功率白光LED的制备及其发光特性研究 被引量:19

Fabrication and Luminescence Characteristics Studies of the High-power White LEDs with Low T_c and High R_a
在线阅读 下载PDF
导出
摘要 用GaN基大功率蓝光LED芯片作为激发光源,分别用荧光粉转换法和红光LED补偿法制备了不同相关色温及显色指数的白光LED。对器件的发光特性研究表明,采用蓝光LED芯片激发单一黄色荧光粉,虽可以获得光通量和发光效率较高的白光LED,但其色温较高,显色性较差;在黄色荧光粉中添加红色荧光粉,由于光谱中红色成分的增加,可降低器件的色温,并提高器件的显色性,但由于目前红色荧光粉的转换效率较低,致使器件的整体发光效率不高;采用蓝光LED芯片激发黄色荧光粉,同时用红光LED进行补偿,通过调整蓝光和红光LED芯片的工作电流以及荧光粉的用量,可获得低色温和高显色性白光LED,而且整体发光效率较高。 GaN-based blue LED chips were used as exciting light source, high-power white LEDs with different correlative color temperature (Tc) and rendering index (Ra) were fabricated through phosphor conversion and red LED compensation. The luminescence characteristics of white LED devices ,such as emission spectrum, chromaticity coordinate, R, ,luminous flux (φ), luminous efficiency (η), and their changes at various forward current (IF) and content of red phosphor (C) were studied. Results indicate that, combining blue LED chip and single YAG:Ce^3+ yellow phosphor,white LEDs with high φ and η could be obtained,but Tc of these devices is relatively high, and Ra is very low. Adding red phosphor into yellow phosphor, the emergence of red light in the emission spectra of these devices results in Tc reduces, and R aincreases. However, because the light-conversion efficiency of red phosphor is very low at present,the luminous efficiency of these white LEDs is dissatisfactory. Adopting blue LED chip to excite yellow phosphor,at the same time red LED chips are used to compensate red light in emission spectrum,white LEDs with low Tc and high Ra would be obtained by adjusting the work current of blue and red LED chips and the dosage of phosphor.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2006年第12期1422-1426,共5页 Journal of Optoelectronics·Laser
基金 国家"十五"科技攻关计划重大资助项目(2003BA316A01-01-02) 深圳市科技计划资助项目
关键词 大功率白光LED 低色温 高显色性 发光特性 High-power white LEDs low color temperature rendering index luminescence characteristics
  • 相关文献

参考文献13

  • 1Daniel A Steigerwald,Jermome C Bhat,Dave Collins,et al.Illumination with solid-state lighting technology[J].IEEE Journal on Selected Topics in Quantum Electronics,2002,8(2):310-320.
  • 2Craford M George.Visible LEDs:the trend toward high power emitters and remaining challenges for solid state lighting[A].SPIE[C].2002,4776:1-8.
  • 3Subramanian Muthu,Associate Member,Frank J P Schuurmans,et al.Red,green,and blue LEDs for white light illumination[J].IEEE Journal on Selected Topics in Quantum Electronics,2002,8(2):330-338.
  • 4Regina Mueller-Mach,Gerd O Mueller,Michael R Krames,et al.High-power phosphor-converted light-emitting diodes based on Ⅲ -nitrides[J].IEEE Journal on Selected Topics in Quantum Electronics,2002,8 (2):339-345.
  • 5Sheu J K,Chang S J,Kuo C H,et al.White-light emission from near UV InGaN/GaN LED chip precoated with blue/green/red phosphors[J].IEEE Photonics Technology Letters,2003,15(1):18-20.
  • 6Jordan R H,Dodabalapur A,Strukelj M,et al.White organic electroluminescence devices[J].Appl Phys Lett,1996,68 (9):1192-1194.
  • 7侯晶莹,程刚,赵毅,刘式墉.高效率白色有机电致发光器件[J].半导体光电,2004,25(6):433-436. 被引量:5
  • 8王树国,华玉林,印寿根,冯秀岚,吴晓明,郑加金,孙媛媛.单层结构白色聚合物电致发光器件制备及其性能[J].光电子.激光,2004,15(6):663-666. 被引量:12
  • 9王静,姜文龙,魏风才,汪津,候晶莹,刘式墉.BCP的厚度对OLED性能的影响[J].光电子.激光,2005,16(9):1036-1039. 被引量:12
  • 10Gerd O Mueller,Regina Mueller-Mach.Illumination grade white LEDs[A].SPIE[C].2002,4776:122-130.

二级参考文献31

  • 1杨惠山,程加力,赵毅,侯晶莹,刘式墉.利用电子传输层掺杂改善有机发光器件的效率[J].光子学报,2004,33(11):1364-1366. 被引量:12
  • 2[1]Kido J,Hongawa K,Okuyama K.White light-emitting organic electroluminescent devices using the poly(N-vinylcarbazole) emitting layer doped with three fluorescent dyes[J].Appl Phys Lett.,1994,64 ( 7 ):815.
  • 3[2]HAMANA Yuji,SANO Takeshi.White-light-emitting materia for organic electroluminescent devices[J].Jpn J Appl Phys,1996,35(2).
  • 4[3]Kido J,Kimura M,Nagai K,et al.Multilayer white light-emitting organic electroluminescent device [J].Science,1995,267:1332-1334.
  • 5[4]Jordan R H,HAMADA Yuji,SAND Takashi,et al.White organic electroluminescent devices[J].Appl Phys Lett ,1996,68:1192-1194.
  • 6[5]Hua Yulin,Feng Xiulan,Wang Wanlu.Organic electroluminescent device with blue emitting light driven at Iow voltage[J]Chinese Journal of Luminescene(发光学报),1998,19:149-151.(in Chinese)
  • 7[6]Cea P,Hua Y,et al.A blended layer MEH-PPV electroluminescent device incorporating a new electron transport material[J].Materials Science and Engineering,2002,22:87-89.
  • 8[7]Li Juan,Hua Yulin,Feng Xiulan,et al.The effects of hat treatment on luminescence performance of polymer lightemitting diodes with single layer strcuture[J].J of Optoelectronics·Laser(光电子·激光),,2001,12(12):12-8.(in Chinese)
  • 9[8]Li Juan,Hua Yulin,Feng Xiulan,et al.Enhancement of the luminescence performance of polymer blue-light-emitting diodes with single layer structure by heat-treatment[J].J ofOptoeleceronics·Laser(光电子·激光),2002,13(11):1101.(in Chinese)
  • 10Rosner S.J.Carr E.C.Ludowise M.J,Girolami G and Erikson H.I,Correlation of cathodo-luminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-Vapor deposition[J].Appl.Phys.Lett.1997 ,70(4):420-422.

共引文献41

同被引文献171

引证文献19

二级引证文献109

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部