摘要
用电子束蒸发的方法制备了ZnS:Zn,Pb荧光薄膜,分别经400℃、600℃退火处理。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、光致发光(PL)谱等,表征了ZnS:Zn,Pb荧光薄膜的结构、成分、形貌和发光性能。实验表明,随着退火温度的升高,薄膜的结构程度提高,弥补了薄膜晶体表面的表面缺陷,提高了薄膜的发光性能。因此,退火处理是提高ZnS:Zn,Pb荧光薄膜发光性能的有效方法之一。
ZnS：Zn, Pb thin films were grown on ITO substrates by electron beam evaporation method with sintered ZnS： Zn, Pb targets,and they are annealed in 400℃ and 600℃ respectively. The construction, ingredient, surface morphology and luminescence properties of the ZnS：Zn, Pb thin films are represented by X-ray diffraction（XRD）, X-ray photoelectron spectroscope（XPS）, scanning electron microscope（SEM） and photoluminescence（PL） spectra, The blue/green luminescent peak is detected in ZnS：Zn, Pb thin films, It is found that crystallization is improved, and the disfigurement on crystal surface is repaired with the annealing temperature increase. The luminescent propoerties of ZnS, Zn, Pb thin films are enhanced in 400℃ and 600℃ annealing processes, So it can be concluded that postdeposition annealing is one of effective methods to increase luminescence properties of ZnS. Zn, Pb phosphor thin films.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2005年第9期1040-1044,共5页
Journal of Optoelectronics·Laser
基金
天津市自然科学基金资助项目(013615211)
天津理工学院科技发展基金资助项目(Lg04032)
天津市重点学科资助项目
