摘要
采用高温固相法合成了不同Si 4+掺杂比例的Gd1.6(W1-x Six)O6:Eu3+0.4荧光粉,分析了Si 4+掺杂对Gd1.6(W1-x Six)O6:Eu3+0.4荧光粉晶格结构的影响,研究了不同Si 4+掺杂比例下的XRD谱、激发光谱、发射光谱和衰减曲线。结果发现:Si 4+的掺杂改变了基质的结构,使得激活剂离子Eu3+周围的晶体场改变,从而改变了荧光粉的发光效率,当Si 4+的掺杂浓度达到0.4mol时,晶体对称性最差,粉体发光强度最大。根据发射光谱和衰减曲线计算了样品的J-O强度参数和无辐射跃迁几率,结果表明适量的Si 4+掺杂可以抑制无辐射跃迁,提高发光强度。计算结果与实验结果相符。
Gd1.6（W1-xSix）O6：Eu^3＋0.4 phosphors with different doping concentrations of Si4＋ were pre- pared by a conventional high temperature solid-state phase reaction method, the influence of Si4＋ doping on the phosphors lattice structure was analyzed, and the X-ray diffraction （XRD） patterns, excitation spectra,emission spectra and decay curves of phosphors under different doped concentrations of Si4＋ were discussed,respectively. The experimental results show that Si4＋ doping changes the structure of the matrix,makes the crystal field around the activator Eu3＋ ions change,which affects the luminous ef- ficiency of phosphor,and when Si4＋ doping concentration reaches 0.4 tool, the crystal symmetry is the worst, and the luminous intensity of phosphors reaches the maximum value. According to the emission spectra and decay curves, we calculate the J-O intensity parameters and nonradiative transition probabili-ty of the samples and find that the appropriate amount of Si4＋ doping can suppress nonradiative transi- tion and enhance the luminous intensity. The theoretical calculation results are agreement with the exper- imental results.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2014年第3期496-500,共5页
Journal of Optoelectronics·Laser
基金
天津市高等学校科技发展基金(20120905)
天津理工大学育苗基金(LGYM201112)资助项目
