摘要
通过实验研究了ＡＺ５２１４光刻胶分别用作正型抗蚀剂和负型抗蚀剂的光刻工艺，给出了抗蚀剂厚度为１μｍ的最佳光刻工艺参数，介绍了ＡＺ５２１４像反转特性的实验研究结果。
The lithographic process of AZ5214 used as positive and negative photoresist is investigated experimentally. The best process parameters where the resist film is lμm thick is given, and the experimental results of image reversal in AZ5214 are presented.
出处
《微细加工技术》
1999年第2期23-27,共5页
Microfabrication Technology
