摘要
研究了等离子增强化学气相淀积(PECVD)制备非晶SiO2薄膜的工艺。系统地研究了反应气体流量比、射频功率、淀积腔内压强、淀积时间等工艺条件对SiO2薄膜质量的影响,采用椭偏仪测量了不同工艺条件下淀积的SiO2薄膜的厚度和折射率。根据以上测试结果分析了各工艺参数对SiO2薄膜淀积速率、折射率以及均匀性的影响规律,并定性讨论了其机理。找到了比较合适的制备高均匀性和典型折射率SiO2薄膜的工艺参数。
A series of amorphous silicon dioxide （SiO2） films were deposited on 100 -mm silicon wafers by the technics of plasma enhanced chemical vapor deposition （ PECVD）, during which RF power, gas flow ratio, chamber pressure and deposition time were altered in turn ,while keeping other parameters unchanged. Film thickness（hence the deposition rate） and refractive index （RI） was measured by ellipsometer, and the influence of above parameters on film qualities was qualitatively discussed according to the results. In addition, a suitable deposition condition for relatively good SiO2 film （high uniformity and suitable RI） was achieved.
出处
《微处理机》
2010年第1期23-26,共4页
Microprocessors
基金
电子科技大学青年科技基金(No.jx0838)
