摘要
本文以ＰＭＯＳ结构为研究对象，对其绝缘栅栅氧化过程进行了计算机动态模拟。提出了抑制杂质分凝的栅氧化新模式。
In this paper,PMOS structure was
taken as a object of the study,the oxidizing process of insulated grid is simulated dynamically by
computer.A new model of grid oxidation for inhibiting impurity segregation was proposed.
出处
《山东科学》
CAS
1999年第1期48-50,共3页
Shandong Science
关键词
微电子技术
MOS结构
绝缘栅
栅氧化
杂质分凝
microelectronics technology computer aided design CAD technology simulation MOS
structure
