摘要
本文分析及研究了对绝缘栅ＬＹ７３２－ＰＭＯＳ－ＦＥＴ结构所进行的工艺及器件模拟的数据，重点在栅源偏压（ＶＣＳ）与ＭＯＳ结构界面电荷分布的定量关系上得到了与实验一致的结果，定量地描述了在常规偏压条件下硅衬底表面电荷的分布及行为，从而揭示了Ｐ－ＭＯＳＦＥＴ电场效应的微观过程．
Analysis and researches that covering-grid LY732-PMOSFET structurewas simulated by technique and device are given.In the quantitative relation between gridsource partial voltage (VGS) and MOS structure boundary surface charges distribution,wehave won similar data to experiment.Distribution of silicon substrate surface charges at theroutine partial voltage condition was described quantitatively,revealing microcosmic course ofthe P-MOSFET electric field effect.
关键词
阈值
计算机模拟
场效应过程
半导体器件
Electric field distribution
Threshold value
Technique
Computerized simulation
