摘要
采用传统的固相烧结方法制备了ZnO:Ti(ZTO)陶瓷靶材,研究了TiO2掺杂量及烧结温度对靶材的微观结构、相对密度和电性能的影响。结果表明:添加适量的TiO2能促进ZTO陶瓷晶粒长大及组织均匀化,掺杂过量TiO2使ZTO陶瓷中析出ZnTi2O4;随TiO2掺杂量的增大,陶瓷靶材的电阻率ρ先快速下降后缓慢升高,当掺杂的x(TiO2)为0.5%,烧结温度为1350℃时,其ρ为1.480?.cm,相对密度为97.7%;当烧结温度为1400℃时,陶瓷靶材的ρ最低(0.305?.cm),其相对密度为97.9%。
ZnO：Ti（ZTO） ceramic targets were prepared by traditional solid-state sintering method.The effects of the TiO2-doped amount and sintering temperature on the microstructure,relative density and electric properties of obtained target were studied.The results show that suitable amount of TiO2 doping can improve growing of the ZTO ceramic grains and homogenizing of the tissue.And an excess TiO2 doping make ZnTi2O4 to separate out from ZTO ceramic.With the increase of TiO2-doped amount,the resistivity of the ceramic target decreases quickly and then increases slowly.When doped x（TiO2） and sintering temperature are 0.5% and 1 350 ℃ respectively,the resistivity（1.480 ？.cm） and relative density（97.7%） are gained for the ceramic targets.And when the sintering temperature is 1 400 ℃,the lowest resistivity（0.305 ？.cm） and higher relative density（97.9%） are gained for the ceramic targets.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第9期37-40,共4页
Electronic Components And Materials
基金
广西"电子信息材料与器件"科技创新团队基金资助项目(No.LD08014B)
关键词
ZNO
透明导电膜
靶材
Ti掺杂
性能
ZnO
transparent and conductive film
target
Ti doping
property
