摘要
采用微波等离子体化学气相沉积法（ＭＰＣＶＤ），以Ｎ２、ＣＨ４作为反应气体合成碳氮膜。通过控制反应温度、气体流量、微波功率、反应气压等工艺条件，在Ｓｉ和Ｐｔ基片上，进行β－Ｃ３Ｎ４晶态薄膜的合成研究。扫描电镜（ＳＥＭ）下观察到生长在Ｓｉ基底上的薄膜具有六角晶棒的密排结构。扫描隧道显微镜（ＳＴＭ）下观察到在Ｐｔ基底上生长的碳氮薄膜由针状晶粒组成。ＥＤＸ分析表明，随沉积条件的不同，Ｓｉ基底上的氮碳薄膜中Ｎ／Ｃ在１．０到２．０之间；Ｐｔ基底上生长的碳氮薄膜Ｎ／Ｃ在０．８～１．３之间。Ｘ射线衍射分析（ＸＲＤ）发现薄膜中含有β－Ｃ３Ｎ４和α－Ｃ３Ｎ４。
Abstract Carbon nitride films were grown on Si and Pt substrates by microwave plasma chemical vapor deposition (MPCVD) method. Scanning electron microscope (SEM) observations showed that the films deposited on Si substrates consisted of densely populated hexagonal crystalline rods. Scanning tunneling microscope (STM) showed that there were many bunches of tip like crystals arranged regularly in a certain direction in the films on pt substrates. Energy dispersive x ray (EDX) analysis showed that the N/C ratios of the films on Si substrates were in the range of 1.0 to 2.0 depending on the deposited condition, and the N/C ratios of the films on Pt substrates were in the range of 0.8 to 1.3. X ray diffraction experiments showed that the films consisted of crystalline phase β C 3N 4. Temperature dependent growth experiments showed that the amount of Si 3N 4 in the films grown on Si substrates could be significantly reduced to negligible amount by controlling the substrate temperature. The films on Pt substrates showed a high bulk modulus of 349 GPa in Nano indentor hardness tests.
出处
《真空》
CAS
北大核心
1999年第1期18-22,共5页
Vacuum
