摘要
采用电子束蒸发方法在200℃的抛光AlN陶瓷衬底上淀积厚度为22nm的Ti膜，并在高真空中退火。利用二次离子质谱（SIMS）对样品进行了深度剖析，给出了Ti／AlN界面组分分布随退火温度和时间的变化关系。在界面区发现了铝化物及其他反应产物。结合卢瑟福背散射谱（RBS），X射线衍射分析（XRD）和Ti-Al－N三元相图推断，铝化物是Ti-Al二元和Ti-Al-N三元化合物。经850℃退火4h后其主要由Ti2AlN组成。
A 200 nm thick Ti film was grown on a polished AlN ceramic substate at 200℃ by electron beam evaporation,and annealed under high vacuum conditions. The depth profile analyses of the samples were conducted by secondare ion mass spectrometry(SIMS), and the effects of the annealing temperature and time on the composition distribution at Ti/AlN interfaces were investigated. The aluminides and other reaction products at interfaces have been found. In combination with Rutherford backscattering spectromety (RBS), X-ray diffration measarement (XRD) and Ti-Al-N ternary phase diagran,the results indicate that the aluminides consist of Ti-Al binary and Ti-Al-N ternary compounds, of which Ti2AlN is dominant after 4 hours annealing at 850℃.
出处
《真空科学与技术》
CSCD
北大核心
1998年第1期50-57,共8页
Vacuum Science and Technology
基金
国家自然科学基金
关键词
二次离子质谱
组分分布
铝化物
薄膜
氮化铝陶瓷
Secondary ion mass spectrometry, Ti/AlN interface, Composition distribution, Aluminide
