摘要
采用电子束蒸发的方法在200℃抛光的(1102)取向的蓝宝石(︿-Al2O3单晶)衬底上淀积200nm的Cr膜,并在高真空中退火。利用MCs+-SIMS技术(在Cs+一次离子轰击下检测MCs+型二次离子)对样品进行了深度剖析,给出了界面组分分布随退火温度与时间的变化关系,并在850℃退火样品中观测到一种新的界面结构。结果表明。
A 200nm Cr film was deposited on a polished(1102)oriented sapphire substrate at 200℃ by electron beam evaporation.Depth profiling was conducted using MCs + SIMS technique(detection of MCs + secondary ion under Cs + primary ion bombardment)after the samples were annealed in high vacuum.The variation of interface composition with annealing temperature and time was given,and a new structure was observed in Cr/sapphire interface after the sapmle was annealed at 850℃.The results show that MCs + SIMS technique is an effective method to analyze the interfacial diffusion and reaction between metal and ceramics.
出处
《半导体技术》
CAS
CSCD
北大核心
2000年第1期33-35,41,共4页
Semiconductor Technology
基金
国家自然科学基金
关键词
CR
蓝宝石
离子质谱
陶瓷半导体
Cr Sapphire Solid solid interfaces Secondary ion spectrometry
