摘要
利用脉冲激光沉积 (PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜 ,借助于X射线衍射(XRD)、扫描电子显微镜 (SEM )及Raman光谱分析了该薄膜的结构 ,并研究了薄膜场致电子发射特性 ,阈值电场为4 6V μm ,当电场为 9V μm时 ,电流密度为 5 0 μA cm2 。
Amorphous boron nitride thin film was prepared on the titanium coated ceramic substrate by pulsed laser deposition. The microstructure of the film was examined by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The field electron emission characteristics were investigated. The I-V characteristics and Powler-Nordheim curve of the film were given.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2002年第12期1110-1112,共3页
Chinese Journal of Lasers
基金
8 6 3计划新材料领域项目
河南省自然科学基金 (编号 :0 0 40 42 0 0 0 )资助项目
关键词
氮化硼薄膜
脉冲激光沉积
场致电子发射
Boron compounds
Electron emission
Microstructure
Pulsed laser deposition
