摘要
采用电子束蒸发的方法在抛光的２００℃ＡｌＮ陶瓷衬底上淀积厚度为２００ｎｍ的Ｔｉ膜，并在高真空中退火．利用二次离子质谱（ＳＩＭＳ）、卢瑟福背散射谱（ＲＢＳ）、俄歇电子能谱（ＡＥＳ）和Ｘ射线衍射分析（ＸＲＤ）技术，研究了从２００～８５０℃温区内Ｔｉ与ＡｌＮ的固相界面反应，给出了界面组分分布随退火温度和时间的变化关系．在界面区发现了三元铝化物并观测到铝化物产生与发展过程．指出铝化物由Ｔｉ－Ａｌ二元和Ｔｉ－Ａｌ－Ｎ三元化合物组成．
A 200nm Ti film was deposited on a polished AlN ceramic substrate at 200℃ by electron beam evaporation, and annealed under high vacuum conditions. Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry(RBS), Auger electron spectroscopy(AES)and X ray diffraction measurement (XRD)were employed to probe the solid interfacial reaction between Ti and AlN from 200℃ to 850℃, and the variation of interfacial composition distribution with annealing temperature and time was given. The ternary aluminides are discovered and the formation and develoment of aluminides are observed in the interfacial region. The results indicate that the aluminides consist of Ti Al binary and Ti Al N ternary compounds. Finally, the experimental results are explained with thermodynamics.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1997年第8期1-7,共7页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金
上海交通大学金属基复合材料国家重点实验室资助
关键词
固相反应
钛
氮化铝陶瓷
薄膜
界面反应
solid solid interfaces solid phase reaction annealing elemental analysis
