摘要
介绍了利用反应溅射法制备Ti1-xAlxN薄膜的工艺过程，测量并分析了Ti1-xAlxN薄膜的光学性能及电阻率与薄膜成分的关系。结果表明，Ti1-zalxN薄膜的折射率和消光系数均随薄膜中Al含量x的增加而减小，电阻率则随x的增加而增大。并从薄膜的基本结构变化过程对实验结果作出解释。
Ti1 - x AlxN films were fabricated using RF reactive sputtering method. The optical properties and the electric resistivity of the films at the room temperture as a function of mol% Al in the Ti1-xAlxN were measared, the results show that the refractive index and extinction coefficient are decreasing with the increasing of the mol% Al in (Ti,Al)N,but the electric resistivity of the films are increasing with the increasing of the Al content. All the change is explained by the change of the structure.
出处
《真空科学与技术》
EI
CSCD
北大核心
1998年第1期22-25,共4页
Vacuum Science and Technology
基金
国家教委博士点基金!9548728
关键词
薄膜
射频反应溅射
光学性质
电阻率
钛氮薄膜
(Ti, Al) N films, RF reactive sputtering, Optical property, Electric resistivity
