摘要
研究对比了不同清洗工艺对制绒Si片性能的影响,采用原子力显微镜和少子寿命测试仪测试经不同化学清洗工艺处理之后的Si片表面微粗糙度和少子寿命。研究发现,使用浓硫酸、双氧水混合液和稀释的氢氟酸溶液清洗Si片能够有效改善Si片表面的质量,Si片表面的微粗糙度由原先的5.96μm降低到4.45μm;采用等离子体增强化学气相沉积法在清洗之后的Si片上生长本征氢化非晶Si层,对Si片进行表面钝化,钝化之后的Si片少子寿命可达107.88μs。测试结果还表明,采用此种清洗方法处理的Si片少子寿命稳定性有很大提高。
The influences of different cleaning processes on the properties of Si wafers are studied. By atomic force microscope （AFM） and the tester of minority carriers lifetime, the micro-roughness of Si surface and the lifetime of minority carriers were measured, respectively. Prior etched in diluted hydrofluoric acid （HF）, the Si wafer was oxided in the mixture of undiluted sulfuric acid （H2SO4） and hydrogen peroxide （H2O2）. The quality of the Si surface is improved. The micro-roughness of Si wafer decreased from 5.96 μm to 4.45μm. Then the lifetime of minority carriers is up to 107.88μs after the passivation of hydrogenated intrinsic amorphous Si by PECVD and the stability of minority carriers lifetime is drarmtically improved.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第4期305-308,共4页
Semiconductor Technology
基金
江苏省高技术招标项目(BG2007002)
江苏省六大人才高峰项目(07-E-008)
江苏省自然科学基金项目(BK2008527)
工信部电子信息产业发展基金项目
上海市国际科技合作基金项目(0952714600)
关键词
晶体硅太阳电池
硅片清洗
表面微粗糙度
少子寿命
crystalline Si solar cell
Si wafer cleaning
micro-roughness of Si surface
minority carriers lifetime
