摘要
Ge抛光片作为化合物太阳电池的衬底材料已引起人们的广泛关注。制备工艺要求衬底材料的表面具有稳定的化学特性和高的清洁度,因此,Ge抛光片的清洗技术显得尤为重要。Ge在常温下既不与浓碱发生反应,也不与单一的强酸反应,其清洗机理与Si、GaAs等材料相差较大。在实验和查阅文献的基础上,阐述了Ge抛光片的清洗机理,介绍了太阳电池用Ge抛光片表面的宏观沾污和微观沾污的清洗方法和过程、同时对Ge抛光片表面的氧化状态进行了分析。另外,还对目前国内外Ge抛光片清洗技术的研究现状及技术水平做了介绍,指出了Ge抛光片清洗技术存在的问题,并对其发展趋势进行了展望。
Ge polished wafers as substrate of compound solar cell attract attention extensively. Due to the stable chemical property and the high purity of the substrate surface, the cleaning technology of Ge polished wafer is important especially. At room temperature, Ge could not have any chemical reaction with alkali solution or mono-acid solution. The cleaning mechanism of Ge has a great deal of difference from Si and GaAs. Based on experimental results and references, the cleaning schematic of Ge crystalline polished wafer is given. The cleaning process on macroscopic and microscopic contamination of Ge polished wafer surface is introduced. The surface oxidation state of the Ge polished wafer is analyzed. The international research status and technology degree are reviewed. The technology of Ge polished wafer at present is analyzed, and the development tendency of the cleaning technology of Ge polished wafer in the future is overviewed.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第9期840-844,共5页
Semiconductor Technology
关键词
太阳电池
Ge抛光片
清洗技术
进展
solar cell
Ge polished wafer
cleaning technology
progress
