摘要
提出了一种利用硫酸/过氧化氢溶液氧化清洗硅基的方法.硅片经超声预清洗后,放入硫酸/过氧化氢溶液中,80℃下氧化清洗其表面的污染物.通过接触角检测,表征了清洗前后硅基表面的亲水性变化.通过原子力显微镜(AFM)表征了经硫酸/过氧化氢溶液清洗后硅基的表面形貌.结果显示,经硫酸/过氧化氢溶液亲水化清洗30 min后的硅基表面的接触角为7.3°,显示出很强的亲水性,其表面均方根粗糙度(RMS)仅为0.03 nm.因此,硫酸/过氧化氢氧化清洗法是一种硅基表面无形貌改变的亲水化清洗方法.
This paper provides a convenient method for the silicon wafer cleaning by using the sulfuric acid/hydrogen peroxide oxidation. The wafer was pretreated by ultrasonic in acetone solution for 3 minutes,followed by immersing the wafer in sulfuric acid /hydrogen peroxide solution at 80 ℃ for several minutes to oxide the contaminants on the silicon wafer surface. The wafer surface was hydrophilic after 30 min oxidation and the contact angle was around 7. 3 °. The contaminants can be washed away by ultrapure water. The AFM image of the wafer surface shows the root-mean square surface roughness （RMS） is 0.03 nm. Therefore, sulfuric acid/hydrogen peroxide oxidation procedures could be an easy method for the silicon wafer cleaning without morphology change.
出处
《武汉工程大学学报》
CAS
2009年第5期1-3,共3页
Journal of Wuhan Institute of Technology
基金
国家自然科学基金(20873097)
绿色化工过程省部共建教育部重点实验室开放基金(GCP200813)
关键词
硅基
化学清洗
表面形貌
silicon wafer cleaning
chemical cleaning
surface morphology
