摘要
采用磁控溅射法,以镍硅合金为靶,制备了一种适用于金属诱导横向晶化的氧化物镍源——自缓释镍源.该镍源在内部构成和晶化现象上都不同于纯金属镍源.采用该镍源制备低温多晶硅材料,晶化速率不明显依赖于镍源薄膜的厚度,且晶化多晶硅膜内的残余镍量亦可有效降低,可为薄膜晶体管提供宽的工艺窗口.本文对用纯金属镍源所得多晶硅薄膜的晶化率、表面粗糙度、电学特性等与溅射条件的关系进行了研究,并对相应结果进行了讨论.
With a Nickel-Silicon alloy as a target of magnetron-sputtering under Ar /O2 mixed gases,a new type of Ni/Si oxide source called self-released nickel source is fabricated.This kind of nickel source is different with the pure nickel source at both crystallized phenomenon and remainder of Ni.Low temperature poly-Silicon crystallized by self-released nickel source has lower nickel-residua and a controllable crystallization rate related without the thickness of Ni source.That is useful for widen process window.The relations of surface roughness and electrical characters of poly-Si crystallized by different source have been studied and discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第4期2775-2782,共8页
Acta Physica Sinica
基金
国家自然科学基金重点项目(批准号:60437030)
天津市自然科学基金(批准号:05YFJMJC01400)资助的课题~~
关键词
自缓释
金属诱导横向晶化
多晶硅薄膜
低温制备与退火
tardily self-release
metal induced lateral crystallization
poly-silicon thin film
low temperature preparation and annealing treatment
