摘要
在普通玻璃衬底上低温 ( 6 0 0℃以下 )制备 poly SiTFT有源矩阵液晶显示器是当前的研究热点。采用金属诱导横向晶化法低温研制了 poly SiTFT。分析了晶化前后有源层的刻蚀对poly SiTFT性能的影响。
Preparation of poly-Si TFT active matrix liquid crystal display at low temperature(<600℃) on the common glass substrates has recently become one of the hot spots. Poly-Si TFT was fabricated at low temperature by metal induced lateral crystallization. The influence of lithography before or after crystallization of activelayer on the properties of poly-Si TFT was analyzed.
出处
《微细加工技术》
2001年第2期49-52,共4页
Microfabrication Technology
