摘要
等离子增强化学气相淀积 ( Plasma- enhanced Chemical Vaper Deposition,PECVD)Si Nx 薄膜在微电子和微机械领域的应用越来越重要 .它的一个重要的物理参数——机械应力 ,也逐渐被人们所重视 .本文研究了应力跟一些基本的淀积条件如温度、压力、气体流量等之间的关系 .讨论了应力产生的原因以及随工艺条件变化的机理 .通过工艺条件的合理选择 ,做出了 0 .8～ 1 .0 μm厚的无应力的 PECVD Si Nx
The using of PECVD SiN x film in the filed of microelectronics and MEMS has been be coming important more and more. The stress, one of the important character, of SiN x film has also been paid more attention. This paper studied the relationship between stress and some deposition conditions, such as temperature, pressure, and gas flow, etc. The cause of the stress and the mechanism of the stress variation with the deposition conditions were discussed. The 0 8～1 0μm stress\|free film of PECVD SiN_x was gotten by adjusting the deposition conditions.
