摘要
采用改进的溶胶-凝胶(sol-gel)技术,在Pt/Ti/SiO2/Si3N4/SiO2/Si基片上研制出具有优良热释电性能的BST,PLT和PZT铁电薄膜,它们是制备单片式非致冷红外焦平面阵列的优选探测材料。解决了制备热释电薄膜单片式非致冷红外焦平面阵列的关键技术,成功研制出8元、9元、10元线列和8×8元阵列,器件电压响应率(RV)达8.6×103V/W。
By a modified sol-gel technique,the BST,PLT and PZT ferroelectric thin films with excel-lent pyroelectricity have been derived on the Pt/Ti/SiO 2 /Si 3 N 4 /SiO 2 /Si substrates.They are the chief can-didate sensitive materials as UFPA pixels.The key fabrication technology of pyroelectric thin film UFPA has been achieved.The8,9,10linear and8×8array of UFPA have been successfully prepared.Their figure of merits(FOM)of voltage detectivity(R V )is about 8.6×10 3 V/W.
出处
《微纳电子技术》
CAS
2003年第11期9-12,共4页
Micronanoelectronic Technology
基金
中国科学院"引进国外杰出人才基金"2001年资助项目
国家自然科学基金重大研究计划资助项目(90201028)
国家"863"计划资助项目(2003AA404150)
